Tystar Thermal CVD System
TYTAN Furnace Processes
Process technology has become a very important aspect of semiconductor fabrication equipment. Semiconductor manufacturers require from the equipment supplier not only process recipes for their processes, but in addition, performance guarantees for deposition rates, film uniformities, and etc. Frequently complete process characterization is requested, showing sensitivity and limitations for each particular process.
TYTAN Furnace systems can be used for all conventional atmospheric and low-pressure CVD processes employed in the semiconductor industry. A variety of advanced wafer fabrication processes have been developed by Tystar for the following application:
- Semiconductor device fabrication or manufacturing
- MEMS fabrication or manufacturing
- Optical MEMS fabrication or manufacturing
- Carbon Nanotube (CNT) fabrication or manufacturing
- Graphene fabrication
- Nanowire fabrication or manufacturing
- Optical waveguides fabrication or manufacturing
- Photovoltaic solar cell fabrication or manufacturing
- Optical sensors fabrication or manufacturing
Some of the processes unique to TYTAN are:
Thick Thermal Oxides
For optical wave guide applications, thick (>15 µm) silicon dioxide films of excellent thickness and index-of-refraction uniformities are required.
Silicon-Germanium Film Deposition
Tystar Si-Ge LPCVD reactors being used at a number of customers sites around the world for the hot wall deposition of Si-Ge poly-crystalline films with Ge concentrations varying from 0 to 100%.
Low Stress Silicon Nitride Films
Tystar Corporation has been providing TYTAN Furnace LPCVD systems for the deposition of low stress Si3N4 films. The systems are being used for MEMS applications at research institutes such as U.C. Berkeley, Stanford University, CIS, Georgia Tech, UCLA, JPL and others.
Low Stress Polysilicon Films
Tystar Corporation developed a process for thick (>/= 6µm) polysilicon film deposition for MEMS applications
Poly Silicon LPCVD with Si2H6
Disilane (Si2H6) for doped and undoped polysilicon LPCVD processes yields deposition rates about 10 times faster than for Silane (SiH4).
Diffusion of Solid Source Dopants
Solid source dopants (Sb2O3, Zn3P2, and others) are sometimes required for many semiconductor process applications. Tystar developed processes for those applications, resulting in excellent customer acceptance.
SIPOS Process
Tystar developed a SIPOS (Semi-Insulating Polycrystalline Silicon) process for the deposition of high-resistivity polysilicon layers, which are used in the fabrication of high voltage semiconductor devices. SIPOS films overcome the disadvantages of SiO2 films, such as accumulation of fixed ions and electric charges at the SiO2/Si interface, charge retention in the SiO2 layer, and the high mobility of alkali ions at elevated temperatures and high electric fields.